BUK9575-100A,127 datasheet

О ДАТАШИТЕ

Маркировка

BUK9575-100A,127
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BUK9575-100A,127 Configuration: Single Continuous Drain Current: 23 A Current - Continuous Drain (id) @ 25?° C: 23A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: - Gate-source Breakdown Voltage: +/- 15 V ID_COMPONENTS: 1951467 Input Capacitance (ciss) @ Vds: 1704pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 175 C Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Through Hole Package / Case: TO-220AB-3 Power - Max: 98W Power Dissipation: 98000 mW Rds On (max) @ Id, Vgs: 72 mOhm @ 10A, 10V Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V Series: TrenchMOS?„? Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2V @ 1mA Product Category: MOSFET RoHS: yes Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: +/- 15 V Resistance Drain-Source RDS (on): 0.072 Ohms Fall Time: 57 ns Rise Time: 120 ns Factory Pack Quantity: 50 Typical Turn-Off Delay Time: 58 ns Part # Aliases: BUK9575-100A Other Names: 934056118127, BUK9575-100A
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12 шт.
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